PART |
Description |
Maker |
IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.27ohm,身份证\u003d 1.3a标准 Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
|
2SD2195 2SD1867 2SD1980 2SD2398 |
Power Transistor(????朵?绠? Transistors Power Transistor (100V 2A) Power Transistor (100V / 2A) Power Transistor (100V , 2A) 功率晶体管(100V的,2A
|
Rohm CO.,LTD. ROHM[Rohm] Rohm Co., Ltd.
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IRF5Y9540CM |
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, P-CHANNEL POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package THRU-HOLE (TO-257AA) 100V, N-CHANNEL POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*) POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN Power 2A 100V Darlington PNP Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL SIPMOS Power Transistor Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply SIPMOS Power Transistor
|
Infineon Technologies AG
|
IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements 100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package -100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package RADIATION HARDENED POWER MOSFET 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY 1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
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SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
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IRFP4710 IRFP4710PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=100V, Rds(on)max=0.014ohm, Id=72A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)最大值\u003d 0.014ohm,身份证\u003d 72A条)
|
IR International Rectifier, Corp.
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